Invention Grant
- Patent Title: Power semiconductor device and power semiconductor core module
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Application No.: US15774014Application Date: 2016-03-03
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Publication No.: US10418347B2Publication Date: 2019-09-17
- Inventor: Yoshiko Tamada , Yoshihiro Yamaguchi , Seiji Oka , Tetsuo Motomiya
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/056526 WO 20160303
- International Announcement: WO2017/149714 WO 20170908
- Main IPC: H01L23/16
- IPC: H01L23/16 ; H01L25/07 ; H01L21/52 ; H01L25/18 ; H01L23/051 ; H01L23/495 ; H01L23/24 ; H01L29/16 ; H01L29/20 ; H01L29/739 ; H01L29/861

Abstract:
It is an object to provide a pressure-contact power semiconductor device and a power semiconductor core module which are capable of properly reducing their sizes. Each power semiconductor core module includes the following: a plurality of power semiconductor chips including a plurality of self-turn-off semiconductor elements and a plurality of diodes adjacent to each other in plan view; and a plurality of first springs disposed between an upper metal plate and a conductive cover plate. The plurality of self-turn-off semiconductor elements of each power semiconductor core module are arranged along any one of an L-shaped line, a cross-shaped line, and a T-shaped line in plan view.
Public/Granted literature
- US20180331077A1 POWER SEMICONDUCTOR DEVICE AND POWER SEMICONDUCTOR CORE MODULE Public/Granted day:2018-11-15
Information query
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