Invention Grant
- Patent Title: Semiconductor memory device and method for manufacturing same
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Application No.: US15819003Application Date: 2017-11-21
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Publication No.: US10418376B2Publication Date: 2019-09-17
- Inventor: Koichi Sakata , Yuta Watanabe , Keisuke Kikutani , Satoshi Nagashima , Fumitaka Arai , Toshiyuki Iwamoto
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/1156 ; H01L21/28 ; H01L21/311 ; H01L27/11565 ; H01L27/1157
Abstract:
A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member. The first electrode film includes three or more first portions and a second portion connecting the first portions to each other. The first portions extend in a first direction and are arranged along a second direction that intersects with the first direction. The plurality of semiconductor members are arranged along the first direction between the first portions and extending in a third direction. The third direction intersects with a plane containing the first direction and the second direction. The charge storage member is disposed between each of the semiconductor members and each of the first portions. The second portion is disposed between the semiconductor members.
Public/Granted literature
- US20180097011A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2018-04-05
Information query
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