Invention Grant
- Patent Title: Transistor and display device
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Application No.: US15957318Application Date: 2018-04-19
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Publication No.: US10418384B2Publication Date: 2019-09-17
- Inventor: Shunpei Yamazaki , Toshinari Sasaki , Junichiro Sakata , Masashi Tsubuku
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2009-204801 20090904
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12 ; H01L27/12 ; H01L29/45 ; H01L29/786 ; H01L29/24 ; H01L29/423 ; H01L29/49 ; H01L27/32
Abstract:
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
Public/Granted literature
- US20180342538A1 TRANSISTOR AND DISPLAY DEVICE Public/Granted day:2018-11-29
Information query
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