Invention Grant
- Patent Title: Image sensor based on avalanche photodiodes
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Application No.: US16117966Application Date: 2018-08-30
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Publication No.: US10418409B2Publication Date: 2019-09-17
- Inventor: Peiyan Cao , Yurun Liu
- Applicant: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
- Applicant Address: CN Shenzhen
- Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen
- Agency: IPro, PLLC
- Agent Qian Gu; Na Xu
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/146 ; H01L31/107 ; G02B21/36

Abstract:
Disclosed herein is an apparatus comprising: an array of avalanche photodiodes (APDs), each of the APDs comprising an absorption region and an amplification region; wherein the absorption region is configured to generate charge carriers from a photon absorbed by the absorption region; wherein the amplification region comprises a junction with an electric field in the junction; wherein the electric field is at a value sufficient to cause an avalanche of charge carriers entering the amplification region, but not sufficient to make the avalanche self-sustaining; wherein the junctions of the APDs are discrete.
Public/Granted literature
- US20180374890A1 IMAGE SENSOR BASED ON AVALANCHE PHOTODIODES Public/Granted day:2018-12-27
Information query
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