Invention Grant
- Patent Title: Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
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Application No.: US15988764Application Date: 2018-05-24
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Publication No.: US10418445B2Publication Date: 2019-09-17
- Inventor: Mina Ryo , Takeshi Tawara , Masaki Miyazato , Masaaki Miyajima
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: Rabin & Berdo, P.C.
- Priority: JP2017-114768 20170609
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/66 ; H01L29/78
Abstract:
In a vertical MOSFET having a trench gate structure, a lifetime killer region is provided in a p-type epitaxial layer formed by epitaxial growth. The lifetime killer region includes an electron lifetime killer that causes electrons entering the lifetime killer region to recombine and become extinct. As a result, the lifetime killer region decreases the electrons generated at the pn interface of the p-type epitaxial layer and an n-type drift layer and enables a configuration in which electrons are not delivered to the p-type epitaxial layer.
Public/Granted literature
- US20180358444A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2018-12-13
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