Invention Grant
- Patent Title: Silicon carbide semiconductor device
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Application No.: US15596782Application Date: 2017-05-16
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Publication No.: US10418476B2Publication Date: 2019-09-17
- Inventor: Cheng-Tyng Yen , Chien-Chung Hung , Chwan-Ying Lee
- Applicant: Hestia Power Inc.
- Applicant Address: TW Hsinchu
- Assignee: HESTIA POWER INC.
- Current Assignee: HESTIA POWER INC.
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW103122787A 20140702
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/16 ; H01L29/06 ; H01L29/08 ; H01L29/45 ; H01L29/872
Abstract:
The present invention is related to a silicon carbide semiconductor device which employs a silicon carbide substrate to form an integrated device. The integrated device of the present invention comprises a metal oxide semiconductor field-effect transistor (MOSFET) and an integrated junction barrier Schottky (JBS) diode in an anti-parallel connection with the MOSFET.
Public/Granted literature
- US20170250275A1 SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2017-08-31
Information query
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