Invention Grant
- Patent Title: Photodiode array
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Application No.: US14647263Application Date: 2013-11-26
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Publication No.: US10418496B2Publication Date: 2019-09-17
- Inventor: Tatsumi Yamanaka , Akira Sakamoto , Noburo Hosokawa
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-si, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-si, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2012-260066 20121128
- International Application: PCT/JP2013/081788 WO 20131126
- International Announcement: WO2014/084212 WO 20140605
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/0224 ; H01L31/0352 ; H01L31/103

Abstract:
A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate, and having an impurity concentration higher than an impurity concentration of the first semiconductor region, a third semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on the one surface side so as to surround the second semiconductor region separately from the second semiconductor region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the first semiconductor region and the second semiconductor region, and electrically connected to the third semiconductor region.
Public/Granted literature
- US20150311358A1 PHOTODIODE ARRAY Public/Granted day:2015-10-29
Information query
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