Invention Grant
- Patent Title: Semiconductor light-emitting element and light-emitting device
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Application No.: US16100705Application Date: 2018-08-10
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Publication No.: US10418525B2Publication Date: 2019-09-17
- Inventor: Shuichiro Yamamoto
- Applicant: NIKKISO CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: NIKKISO CO., LTD.
- Current Assignee: NIKKISO CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Scully Scott Murphy and Presser
- Priority: JP2017-189505 20170929
- Main IPC: H01L33/42
- IPC: H01L33/42 ; H01L33/48 ; H01L33/32 ; H01L33/56 ; H01L33/62 ; H01L33/58

Abstract:
Provided is a semiconductor light-emitting element that emits ultraviolet light with a wavelength of not more than 355 nm, the semiconductor light-emitting element including an electrode portion to be electrically connected to electrodes of a component mounting the element, wherein the electrode portion is formed by laminating any one or more of a metal providing passivity against organic acids, a metal having a lower ionization tendency than hydrogen and a conductive oxide film, and does not include a layer formed of a material that does not provide passivity against organic acids, has higher ionization tendency than hydrogen and is not a conductive oxide film.
Public/Granted literature
- US20190103519A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE Public/Granted day:2019-04-04
Information query
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