Invention Grant
- Patent Title: Method of manufacturing an oxide single crystal substrate for a surface acoustic wave device
-
Application No.: US15542703Application Date: 2016-01-06
-
Publication No.: US10418543B2Publication Date: 2019-09-17
- Inventor: Jun Abe , Masayuki Tanno , Yoshinori Kuwabara
- Applicant: SHIN-ETSU CHEMICAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2015-012070 20150126
- International Application: PCT/JP2016/050213 WO 20160106
- International Announcement: WO2016/121429 WO 20160804
- Main IPC: H01L41/39
- IPC: H01L41/39 ; C30B31/02 ; H03H3/08 ; H03H9/25 ; C30B29/30 ; H01L41/18 ; H03H9/02

Abstract:
[Object]An object of the present invention is to provide a method for manufacturing an oxide single crystal substrate having less dispersion in characteristics within the substrate surface.[Means to solve the Problems]In the manufacture method of the present invention, a powder containing a Li compound is dispersed in a medium to form a slurry, and heat is applied while the slurry is in contact with the surface of the oxide single crystal substrate, so as to diffuse Li into the substrate from the surface thereof to effect a modification of the substrate; or after the slurry is brought into contact with the surface of the oxide single crystal substrate, the oxide single crystal substrate is buried in a powder containing the Li compound, and heat is applied to effect the diffusion of Li in the substrate from the surface thereof whereby a modification of the substrate occurs.
Public/Granted literature
- US20170373245A1 METHOD OF MANUFACTURING AN OXIDE SINGLE CRYSTAL SUBSTRATE FOR A SURFACE ACOUSTIC WAVE DEVICE Public/Granted day:2017-12-28
Information query
IPC分类: