A power module includes: a bridge unit including a bridge circuit composed including a plurality of SiC-MOSFETs Q1 and Q2 and an internal capacitor C1 connected so as to extend over between both ends of the bridge circuit; power terminals P and N of which one ends are respectively connected to both ends of the bridge unit and other ends are respectively exposed to the outside; and a snubber circuit (RB, CB) connected so as to extend over between an exposed side of the positive-side power terminal P and an exposed side of the negative-side power terminal N. A power circuit comprising the power module, and a smoothing capacitor C2 connected in parallel to the snubber circuit. There can be provided the power module and the power circuit which can simultaneously realize the low parasitic inductance and the low noise.