Invention Grant
- Patent Title: MOSFET switch circuit for slow switching application
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Application No.: US14252568Application Date: 2014-04-14
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Publication No.: US10418899B2Publication Date: 2019-09-17
- Inventor: Sik K. Lui , Daniel S. Ng , Xiaobin Wang
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: Patent Law Works LLP
- Main IPC: H02M3/158
- IPC: H02M3/158 ; H03K17/16

Abstract:
A switch circuit includes a first MOS transistor and a second MOS transistor of a same conductivity type connected in parallel between a first terminal and a second terminal. The first and second MOS transistors have respective gate terminals coupled to the control terminal to receive a control signal to turn the switch circuit on or off where the control signal transitions from a first voltage level to a second voltage level at a slow rate of change. The first MOS transistor has a first threshold voltage and the second MOS transistor has a second threshold voltage where the first threshold voltage is less than the second threshold voltage.
Public/Granted literature
- US20150295495A1 MOSFET SWITCH CIRCUIT FOR SLOW SWITCHING APPLICATION Public/Granted day:2015-10-15
Information query
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