Invention Grant
- Patent Title: Radiation-damage-compensation-circuit and SOI-MOSFET
-
Application No.: US15766228Application Date: 2016-10-06
-
Publication No.: US10418985B2Publication Date: 2019-09-17
- Inventor: Ikuo Kurachi , Yasuo Arai , Miho Yamada
- Applicant: Inter-University Research Institute Corporation High Energy Accelerator Research Organization
- Applicant Address: JP Tsukuba-shi JP Tsukuba-shi
- Assignee: INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION,HIGH ENERGY ACCELERATION RESEARCH ORGANIZATION
- Current Assignee: INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION,HIGH ENERGY ACCELERATION RESEARCH ORGANIZATION
- Current Assignee Address: JP Tsukuba-shi JP Tsukuba-shi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2015-199200 20151007
- International Application: PCT/JP2016/079797 WO 20161006
- International Announcement: WO2017/061544 WO 20170413
- Main IPC: H03K17/08
- IPC: H03K17/08 ; H03K17/081 ; H01L29/786 ; H01L27/12 ; H03K19/003 ; H01L27/088 ; H01L21/8234
Abstract:
The present invention provides a radiation-damage-compensation-circuit and a SOI-MOSFET that has high radiation resistance. The SOI-MOSFET has the radiation-damage-compensation-circuit to recover the characteristics of the SOI-MOSFET after X-ray irradiation.
Public/Granted literature
- US20190131965A1 RADIATION-DAMAGE-COMPENSATION-CIRCUIT AND SOI-MOSFET Public/Granted day:2019-05-02
Information query
