Invention Grant
- Patent Title: Level shifter
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Application No.: US15826170Application Date: 2017-11-29
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Publication No.: US10418997B2Publication Date: 2019-09-17
- Inventor: Kaoru Sakaguchi
- Applicant: SII Semiconductor Corporation
- Applicant Address: JP Chiba
- Assignee: ABLIC INC.
- Current Assignee: ABLIC INC.
- Current Assignee Address: JP Chiba
- Agency: Brinks Gilson & Lione
- Priority: JP2017-022483 20170209
- Main IPC: H03L5/00
- IPC: H03L5/00 ; H03K19/0185

Abstract:
Between a power supply potential and a reference potential, a first PMOS transistor and a first NMOS transistor are connected in series via an inverting output node and a second PMOS transistor and a second NMOS transistor are connected in series via a non-inverting output node. A third NMOS transistor is connected in parallel to the first NMOS transistor and a fourth NMOS transistor is connected in parallel to the second NMOS transistor. A gate of the first PMOS transistor and a gate of the third NMOS transistor are connected to the non-inverting output node and a gate of the second PMOS transistor and a gate of the fourth NMOS transistor are connected to the inverting output node. The first and second NMOS transistors receive a non-inverted signal and an inverted signal of an input signal at their gates, respectively.
Public/Granted literature
- US20180226971A1 LEVEL SHIFTER Public/Granted day:2018-08-09
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