Invention Grant
- Patent Title: Semiconductor differential pressure sensor
-
Application No.: US15640948Application Date: 2017-07-03
-
Publication No.: US10422710B2Publication Date: 2019-09-24
- Inventor: Hiroyuki Kishimoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Agent Richard C. Turner
- Priority: JP2017-040054 20170303
- Main IPC: G01L7/08
- IPC: G01L7/08 ; G01L9/00 ; G01L19/00 ; G01L19/06 ; G01L19/14 ; G01L9/04 ; G01L13/02 ; G01L15/00

Abstract:
A semiconductor differential pressure sensor includes a pressure detection element, which is arranged such that its main surface is fixed on a top of a first protrusion with an adhesive while a second protrusion is fitted into its opening. Thus, the pressure detection element is held with high holding power at an exact position. Moreover, the adhesive does not flow into a first pressure introducing path, whereby blocking of the first pressure introducing path is prevented. Furthermore, by providing a recess around the first protrusion, influence of thermal deformation of a resin package on pressure detection characteristics is decreased.
Public/Granted literature
- US20180252606A1 SEMICONDUCTOR DIFFERENTIAL PRESSURE SENSOR Public/Granted day:2018-09-06
Information query