Invention Grant
- Patent Title: Template, imprint device, and manufacturing method of semiconductor device
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Application No.: US15698413Application Date: 2017-09-07
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Publication No.: US10423066B2Publication Date: 2019-09-24
- Inventor: Yusaku Izawa , Masaki Mae
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-018224 20170203
- Main IPC: G03F7/00
- IPC: G03F7/00 ; H01L21/768 ; H01L21/311 ; H01L21/02 ; H01L27/11548 ; H01L27/11575
Abstract:
According to an embodiment, a template includes steps in first to Nth (N is an integer of 2 or greater) stairs formed in a staircase pattern in a height direction. The steps include first steps in the first to Kth (K is an integer of 1 or greater and N−1 or less) stairs and second steps in (K+1)th to Mth (M is an integer of K+1 or greater and N or less) stairs. A height of the second steps is greater than a height of the first steps.
Public/Granted literature
- US20180224740A1 TEMPLATE, IMPRINT DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2018-08-09
Information query
