- Patent Title: Integrated circuits having parallel conductors and their formation
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Application No.: US15973784Application Date: 2018-05-08
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Publication No.: US10424506B2Publication Date: 2019-09-24
- Inventor: Tyler G. Hansen , Ming-Chuan Yang , Vishal Sipani
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L21/033 ; H01L21/311 ; H01L23/535 ; H01L23/532

Abstract:
Integrated circuits, as well as methods of their formation, include a first conductive structure at a first level of the integrated circuit, a second conductive structure at a second level of the integrated circuit, a first conductor at a third level of the integrated circuit between the first level and the second level, a second conductor at the third level and parallel to the first conductor, and a third conductor at the third level and parallel to the first conductor and to the second conductor. The first conductive structure is in physical and electrical contact with the first conductor and the second conductor. The second conductive structure is in physical and electrical contact with the second conductor and the third conductor.
Public/Granted literature
- US20180254214A1 INTEGRATED CIRCUITS HAVING PARALLEL CONDUCTORS AND THEIR FORMATION Public/Granted day:2018-09-06
Information query
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