Invention Grant
- Patent Title: Interconnection structure having a via structure and fabrication thereof
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Application No.: US14748811Application Date: 2015-06-24
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Publication No.: US10424508B2Publication Date: 2019-09-24
- Inventor: Hsin-Chang Tsai , Peng-Hsin Lee
- Applicant: Delta Electronics, Inc.
- Applicant Address: TW Taoyuan Hsien
- Assignee: Delta Electronics, inc.
- Current Assignee: Delta Electronics, inc.
- Current Assignee Address: TW Taoyuan Hsien
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/288 ; H01L23/495 ; H01L23/48 ; H01L23/00 ; H01L25/07 ; H01L25/18 ; H01L25/00 ; H01L21/268
Abstract:
A method of forming an interconnection structure is disclosed, including providing a substrate having a first side and a second side opposite to the first side, forming a via hole through the substrate, wherein the via hole has a first opening in the first side and a second opening in the second side, forming a first pad covering the first opening, and forming a via structure in the via hole subsequent to forming the first pad, wherein the via structure includes a conductive material and is adjoined to the first pad.
Public/Granted literature
- US20150294910A1 INTERCONNECTION STRUCTURE HAVING A VIA STRUCTURE AND FABRICATION THEREOF Public/Granted day:2015-10-15
Information query
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