Invention Grant
- Patent Title: Multiple wafers fabrication technique on large carrier with warpage control stiffener
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Application No.: US15934080Application Date: 2018-03-23
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Publication No.: US10424524B2Publication Date: 2019-09-24
- Inventor: Minghao Shen , Xiaotian Zhou
- Applicant: DiDrew Technology (BVI) Limited
- Applicant Address: CN Chengdu CN Beijing
- Assignee: CHENGDU ESWIN SIP TECHNOLOGY CO., LTD.,BEIJING ESWIN TECHNOLOGY CO., LTD.
- Current Assignee: CHENGDU ESWIN SIP TECHNOLOGY CO., LTD.,BEIJING ESWIN TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Chengdu CN Beijing
- Agency: Burke, Williams & Sorensen, LLP
- Main IPC: H01L23/28
- IPC: H01L23/28 ; H01L23/00 ; H01L23/538 ; H01L25/00 ; H01L25/065

Abstract:
Disclosed is a method of manufacturing a semiconductor device that includes adhering a plurality of semiconductor substrates and a framing member to a supporting surface of a carrier substrate. The semiconductor substrates can be wafers that can be diced or cut into a plurality of dies. Thus, the wafers each have respective active surfaces and at least one respective integrated circuit region. The method can further include encapsulating the framing member and the plurality of semiconductor substrates within an encapsulant. Subsequently, the carrier substrate is removed and a redistribution layer (RDL) is formed on the semiconductor substrates and the framing member.
Public/Granted literature
- US20190252278A1 MULTIPLE WAFERS FABRICATION TECHNIQUE ON LARGE CARRIER WITH WARPAGE CONTROL STIFFENER Public/Granted day:2019-08-15
Information query
IPC分类: