Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15819117Application Date: 2017-11-21
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Publication No.: US10424542B2Publication Date: 2019-09-24
- Inventor: Kentaro Mori , Chiaki Takubo
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2016-184485 20160921
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/538 ; H01L21/48 ; H01L21/56 ; H01L21/78 ; H01L23/31 ; H01L23/00

Abstract:
A semiconductor device includes a first semiconductor chip having a first surface with a semiconductor element and a second surface opposing the first surface. A first metal layer has a third surface supporting the first semiconductor chip and a fourth surface opposing the third surface. The third surface is larger than the second surface. A resin layer has a fifth surface facing the first semiconductor chip and a sixth surface facing the first metal layer. A pad is on the first surface of the first semiconductor chip. A first via contact is within the resin layer on the third surface of the first metal layer. A second via contact is within the resin layer on the pad. The first and second via contacts are connected to first and the second interconnects, respectively.
Public/Granted literature
- US20180096944A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-04-05
Information query
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