Invention Grant
- Patent Title: Field-effect transistor and method therefor
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Application No.: US15715852Application Date: 2017-09-26
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Publication No.: US10424646B2Publication Date: 2019-09-24
- Inventor: Saumitra Raj Mehrotra , Ljubo Radic , Bernhard Grote
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/06
Abstract:
A transistor includes a trench formed in a semiconductor substrate with the trench having a first sidewall and a second sidewall. A vertical field plate is formed in the trench. The vertical field plate is located between the first sidewall and the second sidewall. A gate electrode is formed in the trench with a first edge of the gate electrode proximate to the first sidewall and a second edge of the gate electrode proximate to the vertical field plate. A dielectric material is formed in the trench between the first sidewall and the vertical field plate. An air cavity is formed in the trench between the vertical field plate and the second sidewall with the air cavity having a dielectric constant lower than that of the dielectric material.
Public/Granted literature
- US20190097003A1 FIELD-EFFECT TRANSISTOR AND METHOD THEREFOR Public/Granted day:2019-03-28
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