Invention Grant
- Patent Title: FinFETs with deposited fin bodies
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Application No.: US15598894Application Date: 2017-05-18
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Publication No.: US10424656B2Publication Date: 2019-09-24
- Inventor: Werner Juengling
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/108 ; H01L29/78 ; H01L29/04

Abstract:
Electronic apparatus, systems, and methods in a variety of applications can include a fin field effect transistor (FinFET) having a deposited fin body. Such a FinFET can be implemented as an access transistor in a circuit of an integrated circuit. In an embodiment, an array of FinFETs having a deposited fin bodies can be disposed on digitlines. For the array of FinFETs having a deposited fin bodies structured in memory cells of a memory, the digitlines can be coupled to sense amplifiers. Additional apparatus, systems, and methods are disclosed.
Public/Granted literature
- US20180337263A1 FinFETs with Deposited Fin Bodies Public/Granted day:2018-11-22
Information query
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