A tri-gate FinFET device includes a fin that is positioned vertically above and spaced apart from an upper surface of a semiconductor substrate, wherein the fin has an upper surface, a lower surface opposite of the upper surface, a first side surface, and a second side surface opposite of the first side surface. The axis of the fin in a height direction of the fin is oriented substantially parallel to the upper surface of the semiconductor substrate, and the first side surface of the fin contacts an insulating material. A gate structure is positioned around the upper surface, the second side surface, and the lower surface of the fin, and a gate contact structure is conductively coupled to the gate structure.