Invention Grant
- Patent Title: Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices
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Application No.: US15849975Application Date: 2017-12-21
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Publication No.: US10424660B2Publication Date: 2019-09-24
- Inventor: Qingchun Zhang , Alexander V. Suvorov
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/16 ; H01L21/265 ; H01L29/08 ; H01L29/10
Abstract:
A power MOSFET includes a silicon carbide drift region having a first conductivity type, first and second well regions located in upper portions of the silicon carbide drift region that are doped with second conductivity dopants, and a channel region in a side portion of the first well region, an upper portion of the channel region having the first conductivity type, wherein a depth of the first well region is at least 1.5 microns and the depth of the first well region exceeds a distance between the first and second well regions.
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