Invention Grant
- Patent Title: Semiconductor light emitting element having first semiconductor layer and holes through second semiconductor layer to expose the first semiconductor layer
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Application No.: US15892298Application Date: 2018-02-08
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Publication No.: US10424693B2Publication Date: 2019-09-24
- Inventor: Shunsuke Minato
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Agency: Mori & Ward, LLP
- Priority: JP2015-189038 20150926
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/00 ; H01L33/32 ; H01L33/44

Abstract:
A semiconductor light emitting element includes a first semiconductor layer, an active layer, a second semiconductor layer, a first conducting layer, a second conducting layer, and an insulating layer. The insulating layer is disposed at least on or above the upper surface of the second conducting layer. Holes are opened at given intervals through the second semiconductor layer to expose the first semiconductor layer at bottom surfaces of the holes. In each of the holes, the insulating layer covers from a side-wall surface of each of the holes to a first region provided on or above the upper surface of the second conducting layer around a top of each of the holes. The first conducting layer covers from the bottom surface of each of the holes to a second region provided over the second conducting layer and the insulating layer around the top of each of the holes.
Public/Granted literature
- US20180166610A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2018-06-14
Information query
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