A method for producing a piezoelectric device includes a laminate formation step in which a laminate including a piezoelectric thin film, a support substrate, a metal layer, and a silicon oxide film respectively stacked on both of an upper surface and a lower surface of the metal layer interposed between the piezoelectric thin film and the support substrate is formed, a semi-conducting layer formation step in which a semi-conducting layer is formed by oxidizing the metal layer, and a functional electrode formation step in which a functional electrode that is electro-mechanically coupled to the piezoelectric thin film is formed on a first principal surface of the piezoelectric thin film. The semi-conducting layer is a layer composed of a mixture of a metal constituting the metal layer and an oxide thereof, or a layer composed of a semiconductor which is an oxide of a metal constituting the metal layer.