Invention Grant
- Patent Title: Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
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Application No.: US16144328Application Date: 2018-09-27
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Publication No.: US10424900B2Publication Date: 2019-09-24
- Inventor: James W. Raring , Mathew Schmidt , Christiane Poblenz
- Applicant: Soraa Laser Diode, Inc.
- Applicant Address: US CA Goleta
- Assignee: Soraa Laser Diode, Inc.
- Current Assignee: Soraa Laser Diode, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/343
- IPC: H01S5/343 ; H01S5/34 ; H01L21/02 ; B82Y20/00 ; H01S5/20 ; H01S5/32 ; H01S5/227 ; B28D5/00 ; H01L21/467 ; H01S5/00 ; H01S5/02 ; H01S5/028 ; H01S5/40
Abstract:
A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
Public/Granted literature
- US20190103728A1 LOW VOLTAGE LASER DIODES ON {20-21} GALLIUM AND NITROGEN CONTAINING SUBSTRATES Public/Granted day:2019-04-04
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