Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15905345Application Date: 2018-02-26
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Publication No.: US10425030B2Publication Date: 2019-09-24
- Inventor: Masashi Nagasato
- Applicant: Rohm Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Fish & Richardson P.C.
- Priority: JP2014-218103 20141027
- Main IPC: H01L31/072
- IPC: H01L31/072 ; H02P27/04 ; H03K17/687 ; H02M1/34 ; H01L23/64 ; H05K1/02 ; H02M3/158 ; H02M7/5387

Abstract:
A semiconductor device disclosed in the present specification has a structure that includes: a first terminal that is to be externally connected to a power source line; a second terminal that is to be externally connected to a ground line; a third terminal that is internally connected to the first terminal and to be externally connected to a first terminal of a bypass capacitor; and a fourth terminal that is internally connected to the second terminal and to be externally connected to a second terminal of the bypass capacitor.
Public/Granted literature
- US20180183374A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-06-28
Information query
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