A power electronic device includes an Insulated Metal Substrate Printed Circuit Board (IMS PCB) and a power semiconductor device package. The power semiconductor device package includes a lead frame configured to electrically and mechanically couple the power semiconductor device package to the IMS PCB. The lead frame has a rigid configuration and is made of a lead frame material having a first thermal expansion coefficient. The IMS PCB includes an insulated metal substrate made of a substrate material having a second thermal expansion coefficient within a range of 60% to 140% of the first thermal expansion coefficient.