Invention Grant
- Patent Title: Silicon carbide ingot and method for manufacturing silicon carbide substrate
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Application No.: US15027059Application Date: 2014-10-14
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Publication No.: US10427324B2Publication Date: 2019-10-01
- Inventor: Tsutomu Hori , Makoto Sasaki , Tsubasa Honke , Tomohiro Kawase
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: IPUSA, PLLC
- Priority: JP2013-239995 20131120
- International Application: PCT/JP2014/077304 WO 20141014
- International Announcement: WO2015/076037 WO 20150528
- Main IPC: B28D5/04
- IPC: B28D5/04 ; C30B29/36 ; B24B27/06 ; C30B23/02 ; C30B33/06 ; C30B33/00
Abstract:
A silicon carbide ingot includes an end surface and an end surface opposite to the end surface. In the silicon carbide ingot, the end surface and the end surface face each other in a growth direction, and a gradient of a nitrogen concentration in the growth direction is not less than 1×1016 cm−4 and not more than 1×1018 cm−4.
Public/Granted literature
- US20160236375A1 SILICON CARBIDE INGOT AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE Public/Granted day:2016-08-18
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