Invention Grant
- Patent Title: Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
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Application No.: US16014838Application Date: 2018-06-21
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Publication No.: US10429381B2Publication Date: 2019-10-01
- Inventor: Paul Hoffman
- Applicant: Agilome, Inc.
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; G01N33/543 ; G01N27/414

Abstract:
This invention concerns Chemically-sensitive Field Effect Transistors (ChemFETs) that are preferably fabricated using semiconductor fabrication methods on a semiconductor wafer, and in preferred embodiments, on top of an integrated circuit structure made using semiconductor fabrication methods. The instant ChemFETs typically comprise a conductive source, a conductive drain, and a channel composed of a one-dimensional (1D) or two-dimensional (2D) transistor nanomaterial, which channel extends from the source to the drain and is fabricated using semiconductor fabrication techniques on top of a wafer. The ChemFET also includes a gate, often the gate voltage is provided through a fluid or solution proximate the ChemFET. Such ChemFETs, preferably configured in independently addressable arrays, may be employed to detect a presence and/or concentration changes of various analyte types in chemical and/or biological samples, including nucleic acid hybridization and/or sequencing reactions.
Public/Granted literature
- US20190120830A1 CHEMICALLY-SENSITIVE FIELD EFFECT TRANSISTORS, SYSTEMS, AND METHODS FOR MANUFACTURING AND USING THE SAME Public/Granted day:2019-04-25
Information query
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