Invention Grant
- Patent Title: Memory circuit and cache circuit configuration
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Application No.: US15248093Application Date: 2016-08-26
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Publication No.: US10430334B2Publication Date: 2019-10-01
- Inventor: Hsien-Hsin Sean Lee , William Wu Shen , Yun-Han Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G06F12/0804 ; G11C5/02 ; G11C5/04 ; G06F12/0891 ; G11C7/22

Abstract:
A method of operating a memory circuit is disclosed. The memory circuit comprises a primary memory and a cache memory. The primary memory has P access channels of Q bits of channel bandwidth, and the cache memory has P subsets of Q*N memory cells, wherein P and Q are integers greater than 1, and N is a positive integer. The method includes determining, in response to a command for reading first and second data accessible through first and second access channels respectively, if a valid duplication of the first and second data is stored in the cache memory. If yes, the method further includes storing a duplication of Q*n bits of consecutively addressed data from each of the first and second access channels to the cache memory, n being an integer from 1 to N. Otherwise, the method further includes outputting the first and second data from the cache memory.
Public/Granted literature
- US20160364331A1 Memory Circuit and Cache Circuit Configuration Public/Granted day:2016-12-15
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