Invention Grant
- Patent Title: DEMUX circuit
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Application No.: US15540028Application Date: 2017-05-18
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Publication No.: US10431179B2Publication Date: 2019-10-01
- Inventor: Sikun Hao
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Leong C. Lei
- Priority: CN201710250566 20170417
- International Application: PCT/CN2017/084955 WO 20170518
- International Announcement: WO2018/192049 WO 20181025
- Main IPC: G09G3/36
- IPC: G09G3/36

Abstract:
The invention provides a DEMUX circuit, comprising: data bus, a first, second and third data lines, connected respectively to data bus and a first unit, a second unit and a third unit respectively; each unit respectively comprising: a TFT, a second TFT, a third TFT, and a capacitor, and inputting corresponding a first, a second, and a third switch signals; for each unit, during operation, when the first switch signal being turned on, the first TFT and the second TFT being turned on, and the corresponding data line is pre-charged; when the first switch signal being turned off, the second switch signal being turned on and the corresponding data line being charged to a preset voltage. The DEMUX circuit of the invention can increase the TFT gate driving voltage, leading to improving TFT electron mobility from IGZO and a-Si process, and improving the data line charging rate.
Public/Granted literature
- US20180301104A1 DEMUX CIRCUIT Public/Granted day:2018-10-18
Information query
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