Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US16055436Application Date: 2018-08-06
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Publication No.: US10431266B2Publication Date: 2019-10-01
- Inventor: Kazuyoshi Muraoka , Masami Masuda , Junya Matsuno , Masatoshi Kohno , Yuui Shimizu
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2017-178830 20170919
- Main IPC: G11C7/10
- IPC: G11C7/10 ; H03K19/003 ; H01L27/11529 ; G11B33/10 ; G11C16/26

Abstract:
A semiconductor storage device includes: a first terminal, a plurality of first and second output buffers, a register, a plurality of first pre-drivers including a plurality of first transistors operating according to a first signal, and a plurality of second pre-drivers including a plurality of second transistors operating according to a second signal. A first output control circuit selects the first pre-drivers in accordance with a third signal obtained by conversion of the second signal. A second output control circuit selects the second pre-drivers in accordance with a fourth signal obtained by conversion the first signal. A third output circuit transmits an output signal to the first and second output circuits.
Public/Granted literature
- US20190088294A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2019-03-21
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