Invention Grant
- Patent Title: Semiconductor device and memory controller receiving differential signal
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Application No.: US15679335Application Date: 2017-08-17
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Publication No.: US10431268B2Publication Date: 2019-10-01
- Inventor: Jin-Ho Choi , Seok-Kyun Ko , Sang-Hune Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2016-0118063 20160913; KR10-2016-0184356 20161230
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G06F3/06 ; G11C29/02

Abstract:
A semiconductor device receiving a differential data strobe signal and a method of operating the same are provided. The semiconductor device includes a differential signal phase detector receiving a differential signal including a first signal and a second signal, detecting a phase of the differential signal, and generating a mode control signal; and a receiver receiving the differential signal and a reference voltage and performing a processing operation using the differential signal in a differential mode or using the first signal and the reference voltage in a single mode according to the mode control signal. The semiconductor device may be a memory controller. Data transfer may be disabled in the single mode to prevent false data recognition due to noise.
Public/Granted literature
- US20180075884A1 SEMICONDUCTOR DEVICE AND MEMORY CONTROLLER RECEIVING DIFFERENTIAL SIGNAL Public/Granted day:2018-03-15
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