Invention Grant
- Patent Title: Static random access memory and method of controlling the same
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Application No.: US14291443Application Date: 2014-05-30
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Publication No.: US10431295B2Publication Date: 2019-10-01
- Inventor: Li-Wen Wang , Chih-Yu Lin , Yen-Huei Chen , Hung-Jen Liao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/417 ; G11C11/419
Abstract:
A static random access memory (SRAM) that includes a memory cell comprising at least two p-type pass gates. The SRAM also includes a first data line connected to the memory cell, a second data line connected to the memory cell and a voltage control unit connected to the first data line, wherein the voltage control unit is configured to control the memory cell.
Public/Granted literature
- US20150348598A1 STATIC RANDOM ACCESS MEMORY AND METHOD OF CONTROLLING THE SAME Public/Granted day:2015-12-03
Information query
