Invention Grant
- Patent Title: Methods, articles, and devices for pulse adjustment to program a memory cell
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Application No.: US16158852Application Date: 2018-10-12
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Publication No.: US10431302B2Publication Date: 2019-10-01
- Inventor: Alessio Spessot , Paolo Fantini , Massimo Ferro
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
Public/Granted literature
- US20190108881A1 METHODS, ARTICLES, AND DEVICES FOR PULSE ADJUSTMENT TO PROGRAM A MEMORY CELL Public/Granted day:2019-04-11
Information query
