Invention Grant
- Patent Title: Reconfigurable semiconductor integrated circuit
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Application No.: US15912596Application Date: 2018-03-06
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Publication No.: US10431306B2Publication Date: 2019-10-01
- Inventor: Shinichi Yasuda , Masato Oda , Kosuke Tatsumura
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-151891 20170804
- Main IPC: H03K19/173
- IPC: H03K19/173 ; G11C14/00 ; G11C5/06 ; H03K19/177 ; G11C11/419 ; G11C11/417 ; G11C17/16

Abstract:
A semiconductor integrated circuit according to an embodiment includes: first to third wiring lines; first memory elements disposed in a cross region between the first wiring lines and the second wiring lines; second memory elements disposed in a cross region between the first wiring lines and the third wiring lines; a first write control circuit connected to the first wiring lines: a first circuit connected to one of the second wiring lines and supplying a first potential; a second circuit connected to the other one of the second wiring lines and supplying a second potential lower than the first potential; SRAM cells connected to the third wiring lines; and a selection circuit including input terminals electrically connected to the first wiring lines and an output terminal, the selection circuit connecting one of the input terminals to the output terminal in accordance with an input signal.
Public/Granted literature
- US20190043581A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2019-02-07
Information query
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