Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US16056804Application Date: 2018-08-07
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Publication No.: US10431311B2Publication Date: 2019-10-01
- Inventor: Tatsuo Izumi , Reiko Komiya
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-242858 20171219
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; H01L27/11582 ; H01L29/10 ; G11C16/34 ; G11C16/08

Abstract:
According to one embodiment, a semiconductor memory includes includes conductors, a pillar through the conductors, a controller. The pillar includes a first pillar portion, a second pillar portion, and a joint portion between the first pillar portion and the second pillar portion. Each of the portions where the pillar and the conductors cross functions as a transistor. Among the conductors through the first pillar portion, the conductor most proximal to the joint portion and one of the other conductors respectively function as a first dummy word line and a first word line. Among the conductors through the second pillar portion, the conductor most proximal to the joint portion and one of the other conductors respectively function as a second dummy word line and a second word line.
Public/Granted literature
- US20190189218A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2019-06-20
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