Invention Grant
- Patent Title: Femtosecond laser-induced formation of single crystal patterned semiconductor surface
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Application No.: US15760549Application Date: 2016-09-16
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Publication No.: US10431455B2Publication Date: 2019-10-01
- Inventor: Michael J. Abere , Steven Yalisove , Ben Torralva
- Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Applicant Address: US MI Ann Arbor
- Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Current Assignee Address: US MI Ann Arbor
- Agency: Harness, Dickey & Pierce, P.L.C.
- International Application: PCT/US2016/052212 WO 20160916
- International Announcement: WO2017/053198 WO 20170330
- Main IPC: B23K26/53
- IPC: B23K26/53 ; H01L21/02 ; B23K26/0622 ; B23K103/00

Abstract:
The interaction between multiple intense ultrashort laser pulses and solids typically produces a regular nanoscale surface corrugation. A coupled mechanism has been identified that operates in a specific range of fluences in GaAs that exhibits transient loss of the imaginary part of the dielectric function and X2, which produces a unique corrugation known as high spatial frequency laser induced periodic surface structures (HSFL). This mechanism is unique in that the corrugation does not involve melting or ablation.
Public/Granted literature
- US20180277366A1 FEMTOSECOND LASER-INDUCED FORMATION OF SINGLE CRYSTAL PATTERNED SEMICONDUCTOR SURFACE Public/Granted day:2018-09-27
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