Invention Grant
- Patent Title: Gas composition for dry etching and dry etching method
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Application No.: US16167104Application Date: 2018-10-22
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Publication No.: US10431472B2Publication Date: 2019-10-01
- Inventor: Yoshinao Takahashi , Korehito Kato , Tetsuya Fukasawa , Yoshihiko Iketani
- Applicant: Kanto Denka Kogyo Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: KANTO DENKA KOGYO CO., LTD.
- Current Assignee: KANTO DENKA KOGYO CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02 ; C09K13/00
Abstract:
A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z≤2x and y≤z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.
Public/Granted literature
- US20190057878A1 GAS COMPOSITION FOR DRY ETCHING AND DRY ETCHING METHOD Public/Granted day:2019-02-21
Information query
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