Invention Grant
- Patent Title: Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device
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Application No.: US15052953Application Date: 2016-02-25
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Publication No.: US10431504B2Publication Date: 2019-10-01
- Inventor: Wolfgang Lehnert , Rudolf Berger , Albert Birner , Helmut Brech , Oliver Häberlen , Guenther Ruhl , Roland Rupp
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102015103323 20150306
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/16 ; H01L21/8258 ; H01L21/683 ; H01L21/20 ; H01L29/778 ; H01L27/06 ; H01L29/20 ; H01L33/00 ; H01L29/08 ; H01L27/085 ; H01L23/48 ; H01L29/78
Abstract:
A semiconductor disk of a first crystalline material, which has a first lattice system, is bonded on a process surface of a base substrate, wherein a bonding layer is formed between the semiconductor disk and the base substrate. A second semiconductor layer of a second crystalline material with a second, different lattice system is formed by epitaxy on a first semiconductor layer formed from the semiconductor disk.
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