Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US15438268Application Date: 2017-02-21
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Publication No.: US10431516B2Publication Date: 2019-10-01
- Inventor: Osamu Miyata , Masaki Kasai , Shingo Higuchi
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Priority: JP2004-332175 20041116; JP2005-007983 20050114; JP2005-188732 20050628; JP2005-224421 20050802
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/31 ; H01L23/00 ; H01L23/29 ; H01L23/528 ; H01L23/544 ; H01L21/78
Abstract:
A semiconductor device includes a semiconductor chip having a passivation film, a stress relieving layer provided on the passivation film, and a groove formed in a periphery of a surface of the semiconductor chip, the groove being provided inside of an edge of the semiconductor chip, wherein the stress relieving layer is partly disposed in the groove.
Public/Granted literature
- US20170162463A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-06-08
Information query
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