Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US15885830Application Date: 2018-02-01
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Publication No.: US10431520B2Publication Date: 2019-10-01
- Inventor: Susumu Iwamoto
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2017-071556 20170331
- Main IPC: H01L23/42
- IPC: H01L23/42 ; H01L23/367 ; H01L23/043 ; H01L21/52 ; H01L23/373 ; H01L23/40 ; H01L23/538 ; H01L23/31 ; H01L21/56 ; H01L25/065

Abstract:
A space having a certain thickness is provided between a metal base and a heat-dissipation fin set or the like. A semiconductor device is provided, including: a package portion; a metal base which is housed in the package portion and is exposed at a lower surface of the package portion; a semiconductor chip which is housed in the package portion and is placed above the metal base; and a frame portion provided to surround a penetration space penetrating the package portion, wherein a lower end of the frame portion protrudes below the lower surface of the package portion and a lower surface of the metal base. It is preferable that the frame portion is inserted in the penetration space after the penetration space is formed in the package portion.
Public/Granted literature
- US20180286779A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2018-10-04
Information query
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