Invention Grant
- Patent Title: Semiconductor integrated circuit including discharge control circuit
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Application No.: US15686904Application Date: 2017-08-25
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Publication No.: US10431539B2Publication Date: 2019-10-01
- Inventor: Tsuneyuki Hayashi
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2017-022496 20170209
- Main IPC: H01L23/50
- IPC: H01L23/50 ; G05F1/00 ; H01L27/118

Abstract:
A semiconductor integrated circuit includes an output circuit connected between a power supply and a node at which a load can be connected. The output circuit electrically connects and disconnects the power supply to/from the node according to a logic level of a first signal. A discharge circuit is connected between the node and a reference potential. The discharge circuit disconnects the node from the reference potential when a second signal supplied to the discharge circuit is a first level and connects the node to the reference potential when the second control signal is a second level. A discharge control circuit sets the second signal to the second level when the first signal changes to the second level from first level and then sets the second signal to the first level after a predetermined time has elapsed from a time when the first signal changes to the second level.
Public/Granted literature
- US20180226335A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2018-08-09
Information query
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