Invention Grant
- Patent Title: Self-forming barrier for cobalt interconnects
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Application No.: US15475275Application Date: 2017-03-31
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Publication No.: US10431544B2Publication Date: 2019-10-01
- Inventor: Benjamin D. Briggs , Lawrence A. Clevenger , Takeshi Nogami , Michael Rizzolo
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L21/768 ; H01L23/532
Abstract:
An interconnect for a semiconductor device includes an insulator layer having a trench. A barrier layer is formed on a surface of the insulator layer in the trench. An elemental cobalt conductor is formed on the barrier layer.
Public/Granted literature
- US20170236781A1 SELF-FORMING BARRIER FOR COBALT INTERCONNECTS Public/Granted day:2017-08-17
Information query
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