Invention Grant
- Patent Title: High speed semiconductor device
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Application No.: US15255370Application Date: 2016-09-02
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Publication No.: US10431582B2Publication Date: 2019-10-01
- Inventor: Shu Fang Fu , Chi-Feng Huang , Chia-Chung Chen , Victor Chiang Liang , Fu-Huan Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8238 ; H01L29/78 ; H03K3/03
Abstract:
A semiconductor device includes a fin extending from a substrate, a first source/drain feature, a second source/drain feature, and a gate structure on the fin. A distance between the gate structure and the first source/drain feature is different from a distance between the gate structure and the second source/drain feature.
Public/Granted literature
- US20170345821A1 HIGH SPEED SEMICONDUCTOR DEVICE Public/Granted day:2017-11-30
Information query
IPC分类:
