Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16048679Application Date: 2018-07-30
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Publication No.: US10431649B2Publication Date: 2019-10-01
- Inventor: Shinya Kyogoku , Ryosuke Iijima
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland Maier & Neustadt, L.L.P.
- Priority: JP2017-240816 20171215
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/06 ; H01L29/16 ; H01L29/10 ; H01L29/78 ; H01L29/739
Abstract:
According to one embodiment, a semiconductor device includes a first conductive portion, a first extension portion, a first conductive region, a first extension region, a semiconductor portion, and an insulating portion. The first conductive portion includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, and a sixth portion. The first extension portion is electrically connected to the first conductive portion. The first conductive region is provided between the first portion and the second portion, between the third portion and the fourth portion, and between the fifth portion and the sixth portion. The first extension region is electrically connected to the first conductive region. The semiconductor portion includes silicon carbide and includes first to third semiconductor regions. The insulating portion is provided between the first conductive portion and the semiconductor portion and between the first extension portion and the semiconductor portion.
Public/Granted literature
- US20190189736A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-06-20
Information query
IPC分类:
