Invention Grant
- Patent Title: Semiconductor device with single-crystal nanowire FinFET
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Application No.: US15834082Application Date: 2017-12-07
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Publication No.: US10431652B2Publication Date: 2019-10-01
- Inventor: Hsin-Yu Chen , Huai-Tzu Chiang , Sheng-Hao Lin , Hao-Ming Lee
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201510111039 20150313
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/786 ; H01L29/66 ; H01L29/423 ; H01L21/02 ; H01L29/10 ; H01L29/775 ; B82Y10/00 ; H01L21/324
Abstract:
A semiconductor device and a method of forming the same, the semiconductor device includes a single crystal substrate, a source/drain structure and a nanowire structure. The source/drain structure is disposed on and contacts with the substrate. The nanowire structure is connected to the source/drain structure.
Public/Granted literature
- US20180102411A1 SEMICONDUCTOR DEVICE WITH SINGLE-CRYSTAL NANOWIRE FINFET Public/Granted day:2018-04-12
Information query
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