Invention Grant
- Patent Title: Extrinsic base doping for bipolar junction transistors
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Application No.: US14749836Application Date: 2015-06-25
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Publication No.: US10431654B2Publication Date: 2019-10-01
- Inventor: Renata Camillo-Castillo , David L. Harame , Qizhi Liu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Sherman IP LLP
- Agent Kenneth L. Sherman; Steven Laut
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/225 ; H01L21/324 ; H01L29/66 ; H01L29/737 ; H01L29/06 ; H01L29/08 ; H01L29/732
Abstract:
Device structure and fabrication methods for a bipolar junction transistor. A base layer is formed and an emitter is formed on a first portion of the base layer. A dopant-containing layer is deposited on a second portion of the base layer. Dopant is transferred from the dopant-containing layer into the second portion of the base layer to define an extrinsic base of the device structure.
Public/Granted literature
- US20160380055A1 EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS Public/Granted day:2016-12-29
Information query
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