Invention Grant
- Patent Title: Self-limiting fin spike removal
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Application No.: US15890671Application Date: 2018-02-07
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Publication No.: US10431660B2Publication Date: 2019-10-01
- Inventor: Kangguo Cheng , Choonghyun Lee , Juntao Li , Peng Xu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/417 ; H01L29/66 ; H01L21/762 ; H01L21/324 ; H01L21/8234 ; H01L29/78
Abstract:
Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes laterally forming a spacer on a side of the semiconductor structure. The method further includes performing a thermal anneal on the semiconductor structure. The method further includes performing an etch to remove materials formed by the thermal anneal.
Public/Granted literature
- US20190245049A1 SELF-LIMITING FIN SPIKE REMOVAL Public/Granted day:2019-08-08
Information query
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